Radiation hardness study of an APS CMOS particle tracker

被引：0

作者：

Dulinski, W ^{[1
]}

Deptuch, G ^{[1
]}

Gornushkin, Y ^{[1
]}

Jalocha, P ^{[1
]}

Riester, JL ^{[1
]}

Winter, M ^{[1
]}

机构：

[1] ULP, IN2P3, LEPSI, F-67037 Strasbourg, France

来源：

2001 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORDS, VOLS 1-4 | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The adequacy of Monolithic Active Pixel Sensors for charged particle tracking has been assessed, based on prototypes fabricated in 0.6, 0.35 and 0.25 mum CMOS processes. First radiation hardness studies of these prototypes are presented. Measurements were performed using a 30 MeV/c proton beam, a fast neutrons from a nuclear reactor and a 10 keV X-ray generator as irradiation sources. The losses in the collected charge were measured after 5x-10(11) proton S/cm(2) as well as after a total fluence of 10(12) neutron S/cm(2). Moderate dose (hundreds of kRads) of X-ray photons induces an important increase of a leakage current, showing also limited effect on the collected charge. Test results are reviewed and new charge collecting radiation tolerant structures are proposed.

引用

页码：100 / 103

页数：4

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