Anomalous quantum Hall effect induced by nearby quantum dots

被引：0
|
作者：
Takehana, K.
Takamasu, T.
Kido, G.
Henini, M.
Eaves, L.
机构：
[1] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050047, Japan
[2] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 34卷 / 1-2期
基金：
英国工程与自然科学研究理事会;
关键词：
quantum dots; quantum Hall effect;
D O I：
10.1016/j.physe.2006.03.003
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Transport measurements in high magnetic fields have been performed on two-dimensional electron system (2DES) separated by a thin barrier layer from a layer of InAs self-assembled quantum dots (QDs). Clear feature of quantum Hall effect was observed in spite of presence of QDs nearby 2DES. However, both magnetoresistance, rho(xx), and Hall resistance, rho(xy), are suppressed significantly only in the magnetic field range of filling factor in 2DES v < 1 and voltage applied on a front gate V-g > 0 V. The results indicate that the electron state in QDs induces spin-flip process in 2DES. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：148 / 151
页数：4
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