Enhanced Efficiency of Cu(In,Ga)Se2 Solar Cells with a Thin CdS Buffer Layer Via a Zn0.8Mg0.2O Second Buffer Layer

被引：0
作者：
Li, Hui [1 ,2 ]
Qu, Fei [1 ]
Gu, Hongwei [1 ,2 ]
Wang, Wenjing [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Elect Engn, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年
关键词：
Solar energy; Photovoltaic cells; Thin films; Zn0.8Mg0.2O; Buffer layer; Cu(In; Ga)Se-2;
D O I：
暂无
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
Cu(In, Ga)Se-2 (CIGS) polycrystalline thin-film solar cells with an area of 0.25 cm(2) were prepared by a three-stage co-evaporation method. By applying Zn0.8Mg0.2O secondary buffer layer, we obtained CIGS solar cells with an efficiency of 13.97% with only 20 nm CdS first buffer layer. The thickness of CdS buffer layer was greatly reduced by applying Zn0.8Mg0.2O secondary buffer layer. The Zn0.8Mg0.2O buffer layer reduced the optical loss and interface recombination, leasing to the enhanced performance of CIGS solar cells.
引用
收藏
页码：3003 / 3005
页数：3
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