System-Level Modeling and Reliability Analysis of Microprocessor Systems

被引：0

作者：

Chen, Chang-Chih ^{[1
]}

Milor, Linda ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

2013 5TH IEEE INTERNATIONAL WORKSHOP ON ADVANCES IN SENSORS AND INTERFACES (IWASI) | 2013年

关键词：

wearout; microprocessor reliability; electromigration; stress migration; stress-induced voiding; backend time-dependent dielectric breakdown; negative bias temperature instability; positive bias temperature instability; gate oxide breakdown; time-dependent dielectric breakdown; hot carrier injection; aging; WEAROUT MECHANISMS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we have developed a framework to study wearout of state-of-the-art microprocessor systems. Taking into account the detailed thermal and electrical stress profiles, which are determined by running benchmarks on the system, we present a methodology to accurately estimate the lifetime due to each mechanism. The lifetime-limiting blocks and paths of a circuit are highlighted using standard benchmarks.

引用

页码：178 / 183

页数：6

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