System-Level Modeling and Reliability Analysis of Microprocessor Systems

被引：0
|
作者：
Chen, Chang-Chih [1 ]
Milor, Linda [1 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
来源：
2013 5TH IEEE INTERNATIONAL WORKSHOP ON ADVANCES IN SENSORS AND INTERFACES (IWASI) | 2013年
关键词：
wearout; microprocessor reliability; electromigration; stress migration; stress-induced voiding; backend time-dependent dielectric breakdown; negative bias temperature instability; positive bias temperature instability; gate oxide breakdown; time-dependent dielectric breakdown; hot carrier injection; aging; WEAROUT MECHANISMS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we have developed a framework to study wearout of state-of-the-art microprocessor systems. Taking into account the detailed thermal and electrical stress profiles, which are determined by running benchmarks on the system, we present a methodology to accurately estimate the lifetime due to each mechanism. The lifetime-limiting blocks and paths of a circuit are highlighted using standard benchmarks.
引用
收藏
页码：178 / 183
页数：6
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