Physics of charge transport in metal monopolar (n- or p-type) semiconductor metal structures

被引：9

作者：

El Filali, B. ^{[1
]}

Titov, O. Yu ^{[2
]}

Gurevich, Yu G. ^{[3
]}

机构：

[1] UPIITA Inst Politecn Nacl, Av IPN 2580, Cdmx 07738, Mexico

[2] Inst Mexicano Petr, Eje Cent Lazaro Cardenas 152, Cdmx 07730, Mexico

[3] CINVESTAV IPN, Dept Fis, Av IPN 2508 Apartado Postal 14-740, Cdmx 07000, Mexico

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2018年 / 118卷

关键词：

Monopolar transport phenomena; Schottky diode; Ohmic contacts;

D O I：

10.1016/j.jpcs.2018.02.047

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Equations and boundary conditions for charge transport in a monopolar semiconductor of finite size with metal contacts are formulated. It is shown that metal-p-type semiconductor contacts are essentially different from those made with n-type semiconductors. Furthermore, it is shown that the bulk space charge established over distances on the order of the Debye length does notinfluence the current-voltage characteristics of a semiconductor device operating in a linear mode.

引用

页码：14 / 20

页数：7

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