Physics of charge transport in metal monopolar (n- or p-type) semiconductor metal structures

被引：9
|
作者：
El Filali, B. [1 ]
Titov, O. Yu [2 ]
Gurevich, Yu G. [3 ]
机构：
[1] UPIITA Inst Politecn Nacl, Av IPN 2580, Cdmx 07738, Mexico
[2] Inst Mexicano Petr, Eje Cent Lazaro Cardenas 152, Cdmx 07730, Mexico
[3] CINVESTAV IPN, Dept Fis, Av IPN 2508 Apartado Postal 14-740, Cdmx 07000, Mexico
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2018年 / 118卷
关键词：
Monopolar transport phenomena; Schottky diode; Ohmic contacts;
D O I：
10.1016/j.jpcs.2018.02.047
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Equations and boundary conditions for charge transport in a monopolar semiconductor of finite size with metal contacts are formulated. It is shown that metal-p-type semiconductor contacts are essentially different from those made with n-type semiconductors. Furthermore, it is shown that the bulk space charge established over distances on the order of the Debye length does notinfluence the current-voltage characteristics of a semiconductor device operating in a linear mode.
引用
收藏
页码：14 / 20
页数：7
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