Transport in bilayer graphene: Calculations within a self-consistent Born approximation

被引:245
作者
Koshino, Mikito [1 ]
Ando, Tsuneya [1 ]
机构
[1] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan
关键词
D O I
10.1103/PhysRevB.73.245403
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The transport properties of a bilayer graphene are studied theoretically within a self-consistent Born approximation. The electronic spectrum is composed of k-linear dispersion in the low-energy region and k-square dispersion as in an ordinary two-dimensional metal at high energy, leading to a crossover between different behaviors in the conductivity on changing the Fermi energy or disorder strengths. We find that the conductivity approaches 2e(2)/pi(2)h per spin in the strong-disorder regime, independently of the short- or long-range disorder.
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页数:8
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