Emerging Applications for High K Materials in VLSI Technology

被引：138

作者：

Clark, Robert D. ^{[1
]}

机构：

[1] Amer LLC, TEL Technol Ctr, Albany, NY 12203 USA

来源：

MATERIALS | 2014年 / 7卷 / 04期

关键词：

high K; dielectric; CVD; ALD; contacts; CMOS; DRAM; resistive RAM; diode; patterning; ATOMIC LAYER DEPOSITION; FIELD-EFFECT TRANSISTORS; SWITCHING PARAMETER VARIATION; WORK FUNCTION CONTROL; ALUMINUM-OXIDE; HAFNIUM OXIDE; INTERFACIAL DIPOLE; CMOS TRANSISTORS; N-MOSFETS; GATE;

D O I：

10.3390/ma7042913

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The current status of High K dielectrics in Very Large Scale Integrated circuit (VLSI) manufacturing for leading edge Dynamic Random Access Memory (DRAM) and Complementary Metal Oxide Semiconductor (CMOS) applications is summarized along with the deposition methods and general equipment types employed. Emerging applications for High K dielectrics in future CMOS are described as well for implementations in 10 nm and beyond nodes. Additional emerging applications for High K dielectrics include Resistive RAM memories, Metal-Insulator-Metal (MIM) diodes, Ferroelectric logic and memory devices, and as mask layers for patterning. Atomic Layer Deposition (ALD) is a common and proven deposition method for all of the applications discussed for use in future VLSI manufacturing.

引用

页码：2913 / 2944

页数：32