Role of hybridization on the Schottky barrier height of carbon nanotube field effect transistors

被引：8

作者：

Casterman, D. ^{[1
]}

De Souza, M. M. ^{[1
]}

Tahraoui, A. ^{[2
]}

Durkan, C. ^{[2
]}

Milne, W. I. ^{[2
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[2] Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 12期

基金：

英国工程与自然科学研究理事会;

关键词：

ab initio calculations; carbon nanotubes; density functional theory; effective mass; energy gap; nanotube devices; Schottky barriers; Schottky gate field effect transistors; semiconductor device models; semiconductor materials; INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; FAMILY BEHAVIOR; TRANSITION; PSEUDOPOTENTIALS; CONTACT; DENSITY;

D O I：

10.1103/PhysRevB.79.125407

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The impact of hybridization on the Schottky barrier height (SBH) for holes at a metal/nanotube contact is investigated using ab initio density-functional theory. For small diameters, the impact of hybridization is a deviation of the SBH in comparison to that calculated using the "1/d" rule, where d is the diameter of the carbon nanotube (CNT). In the hybridization region, the SBH reduces with chiral angle, suggesting that CNTs in this region may well be suited to microelectronic applications due to small SBH and large band gaps. Hybridization also causes a difference between the effective mass of electrons and holes, supposed to be identical within the tight-binding approximation. A strongly patterned behavior of the effective mass dependent on chirality and diameter is also reported here.

引用

页数：6

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