Cavity solitons in driven VCSELs above threshold

被引:2
作者
Tissoni, G [1 ]
Protsenko, I [1 ]
Kheradmand, R [1 ]
Prati, F [1 ]
Brambilla, M [1 ]
Lugiato, LA [1 ]
机构
[1] Univ Insubria, INFM, Dipartimento Sci, I-22100 Como, Italy
来源
SEMICONDUCTOR LASERS AND LASER DYNAMICS | 2004年 / 5452卷
关键词
cavity solitons; pattern formation; semiconductor lasers;
D O I
10.1117/12.544775
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
CSs have been theoretically predicted and recently experimentally demonstrated in broad area, vertical cavity, driven semiconductor lasers (VCSELs) slightly below the lasing threshold. Above threshold, the simple adiabatic elimination of the polarization variable is not correct, leading to oscillatory instabilities with a spuriously high critical wave-number. To achieve real insight on the complete dynamical problem, we study here the complete system of equations and find regimes where a Hopf instability, typical of lasers above threshold, affects the lower intensity branch of the homogeneous steady state, while the higher intensity branch is unstable due to a Turing instability. Numerical results obtained by direct integration of the dynamical equations show that writable/erasable CSs are possible in this regime, sitting on unstable background.
引用
收藏
页码:335 / 343
页数:9
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