Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex

被引：52

作者：

Mizuguchi, Yoshikazu ^{[1
]}

Omachi, Atsushi ^{[1
]}

Goto, Yosuke ^{[2
]}

Kamihara, Yoichi ^{[2
]}

Matoba, Masanori ^{[2
]}

Hiroi, Takafumi ^{[1
]}

Kajitani, Joe ^{[1
]}

Miura, Osuke ^{[1
]}

机构：

[1] Tokyo Metropolitan Univ, Dept Elect & Elect Engn, Hachioji, Tokyo 1920397, Japan

[2] Keio Univ, Dept Appl Phys & Physicoinformat, Yokohama, Kanagawa 2238522, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 16期

关键词：

SUPERCONDUCTIVITY; POWER;

D O I：

10.1063/1.4900953

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the thermoelectric properties of the novel layered bismuth chalcogenides LaOBiS2-xSex. The partial substitution of S by Se produced the enhancement of electrical conductivity (metallic characteristics) in LaOBiS2-xSex. The power factor largely increased with increasing Se concentration. The highest power factor was 4.5 mu W/cmK(2) at around 470 degrees C for LaOBiS1.2Se0.8. The obtained dimensionless figure-of-merit (ZT) was 0.17 at around 470 degrees C in LaOBiS1.2Se0.8. (C) 2014 AIP Publishing LLC.

引用

页数：4

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