Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaNHFETs

被引：87
作者：
Rajasingam, S [1 ]
Pomeroy, JW
Kuball, M
Uren, MJ
Martin, T
Herbert, DC
Hilton, KP
Balmer, RS
机构：
[1] Univ Bristol, Phys Lab, Bristol BS8 1TL, Avon, England
[2] QinetiQ Ltd, Malvern WR14 3PS, Worcs, England
来源：
IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 07期
基金：
英国工程与自然科学研究理事会;
关键词：
electric field measurement; field-effect transistors (FETs); finite difference methods; gallium compounds; modeling; Monte Carlo methods; Raman spectroscopy; temperature measurement;
D O I：
10.1109/LED.2004.830267
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Temperature profiles in the source/drain (S/D) opening of a single finger AlGaN-GaN heterostructure field-effect transistor wire studied at increasing S/D voltages by micro-Raman spectroscopy with <1 mum spatial resolution. These profiles imply high field regions near the gate edge of length similar to0.4 mum for S/D voltages between 45 and 75 V. Electric field strengths of similar to1.2 and similar to1.9 MV/cm are estimated for 45 and 75 V S/D voltage. The experimental results are in excellent agreement with 2-D Monte Carlo simulations.
引用
收藏
页码：456 / 458
页数：3
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