Electroluminescence from Si nanostructure-based silicon nitride light-emitting devices

被引：1

作者：

Lin Zhen-Xu ^{[1
]}

Lin Ze-Wen ^{[1
]}

Zhang Yi ^{[1
]}

Song Chao ^{[2
]}

Guo Yan-Qing ^{[2
]}

Wang Xiang ^{[2
]}

Huang Xin-Tang ^{[1
]}

Huang Rui ^{[1
,2
]}

机构：

[1] Cent China Normal Univ, Inst Nanosci & Nanotechnol, Wuhan 430079, Peoples R China

[2] Hanshan Normal Univ, Dept Phys & Elect Engn, Chaozhou 521041, Peoples R China

来源：

ACTA PHYSICA SINICA | 2014年 / 63卷 / 03期

基金：

中国国家自然科学基金;

关键词：

nc-Si; silicon nitride; electroluminescence;

D O I：

10.7498/aps.63.037801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Dense Si nanostructures embedded in silicon nitride prepared by plasma- enhanced chemical vapor deposition (PECVD) was used as luminescence active layer to fabricate light-emitting diodes based on p-Si/SiN-based emitter/AZO structure. Visible electroluminescence from the device was observed at room temperature. It is found that the electroluminescence intensity of the device can be further enhanced significantly by inserting an ultrathin nanocrystalline Si layer between the p-Si substrate and SiN-based emitter as a hole barrier layer. Moreover, the electroluminescence efficiency is increased by more than 80% as compared to the decice without the nc-Si barrier layer.

引用

页数：4

共 16 条

[1] VISIBLE PHOTOLUMINESCENCE IN CRYSTALLIZED AMORPHOUS SIH/SINXH MULTIQUANTUM-WELL STRUCTURES [J].

CHEN, KJ ;

HUANG, XF ;

JUN, X ;

DUAN, F .

APPLIED PHYSICS LETTERS, 1992, 61 (17) :2069-2071

[2] Current transport mechanism in silicon-rich silicon nitride/c-Si heterojunction [J].

Ding Wen-Ge ;

Sang Yun-Gang ;

Yu Wei ;

Yang Yan-Bin ;

Teng Xiao-Yun ;

Fu Guang-Sheng .

ACTA PHYSICA SINICA, 2012, 61 (24)

[3] Controlling the red luminescence from silicon quantum dots in hydrogenated amorphous silicon nitride films [J].

Hao, H. L. ;

Wu, L. K. ;

Shen, W. Z. .

APPLIED PHYSICS LETTERS, 2008, 92 (12)

[4] Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride [J].

Huang, R. ;

Song, J. ;

Wang, X. ;

Guo, Y. Q. ;

Song, C. ;

Zheng, Z. H. ;

Wu, X. L. ;

Chu, Paul K. .

OPTICS LETTERS, 2012, 37 (04) :692-694

[5] Suppression of Hole Overflow and Enhancement of Light Emission Efficiency in Si Quantum Dots Based Silicon Nitride Light Emitting Diodes [J].

Huang, Rui ;

Lin, Zewen ;

Lin, Zhenxu ;

Song, Chao ;

Wang, Xiang ;

Guo, Yanqing ;

Song, Jie .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2014, 20 (04)

[6] Fabrication and luminescence properties of Si quantum dots based on Si-rich SiNx/N-rich SiNy multilayer [J].

Huang Rui ;

Wang Dan-Qing ;

Song Jie ;

Ding Hong-Lin ;

Wang Xiang ;

Guo Yan-Qing ;

Chen Kun-Ji ;

Xu Jun ;

Li Wei ;

Ma Zhong-Yuan .

ACTA PHYSICA SINICA, 2010, 59 (08) :5823-5827

[7] Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices [J].

Huang, Rui ;

Dong, Hengping ;

Wang, Danqing ;

Chen, Kunji ;

Ding, Honglin ;

Wang, Xiang ;

Li, Wei ;

Xu, Jun ;

Ma, Zhongyuan .

APPLIED PHYSICS LETTERS, 2008, 92 (18)

[8] Hot carrier recombination model of visible electroluminescence from metal-oxide-silicon tunneling diodes [J].

Liu, CW ;

Chang, ST ;

Liu, WT ;

Chen, MJ ;

Lin, CF .

APPLIED PHYSICS LETTERS, 2000, 77 (26) :4347-4349

[9] Blue-violet photoluminescence from amorphous Si-in-SiNx thin films with external quantum efficiency in percentages [J].

Ma, LB ;

Song, R ;

Miao, YM ;

Li, CR ;

Wang, YQ ;

Cao, ZX .

APPLIED PHYSICS LETTERS, 2006, 88 (09)

[10] Direct-Current and Alternating-Current Driving Si Quantum Dots-Based Light Emitting Device [J].

Mu, Weiwei ;

Zhang, Pei ;

Xu, Jun ;

Sun, Shenghua ;

Xu, Jie ;

Li, Wei ;

Chen, Kunji .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2014, 20 (04)

← 1 2 →