Theoretical analysis of the enhanced electric field at the triple junction

被引:28
作者
Chung, MS [1 ]
Yoon, BG
Cutler, PH
Miskovsky, NM
机构
[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
[2] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 03期
关键词
D O I
10.1116/1.1689309
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The electric-field behavior at the triple junction of metal-dielectric-vacuum is theoretically investigated. For a two-dimensional junction in which the electric-field magnitude F behaves as r(v-1), v is obtained as a function of the configuration geometry and the dielectric constant. It is found that v varies with the dielectric portion in the field-varying region, becoming as low as 0.25 in the extreme case. The enhancement of F due to the reduction of V is responsible for the field emission enhancement as well as the vacuum insulation breakdown at the triple junction. (C) 2004 American Vacuum Society.
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页码:1240 / 1243
页数:4
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