Theoretical analysis of the enhanced electric field at the triple junction

被引：30

作者：

Chung, MS ^{[1
]}

Yoon, BG

Cutler, PH

Miskovsky, NM

机构：

[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

[2] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 03期

关键词：

D O I：

10.1116/1.1689309

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electric-field behavior at the triple junction of metal-dielectric-vacuum is theoretically investigated. For a two-dimensional junction in which the electric-field magnitude F behaves as r(v-1), v is obtained as a function of the configuration geometry and the dielectric constant. It is found that v varies with the dielectric portion in the field-varying region, becoming as low as 0.25 in the extreme case. The enhancement of F due to the reduction of V is responsible for the field emission enhancement as well as the vacuum insulation breakdown at the triple junction. (C) 2004 American Vacuum Society.

引用

页码：1240 / 1243

页数：4

共 13 条

[1] The use of internal field emission to inject electronic charge carriers into the conduction band of diamond films: a review [J].