A Comparative Study of GaN-Based Direct Current and Alternating Current High Voltage Light-Emitting Diodes

被引:4
作者
Zhou, Shengjun [1 ,2 ]
Gao, Yilin [1 ]
Zheng, Chenju [1 ]
Liu, Yingce [3 ]
Hu, Hongpo [1 ]
Lv, Jiajiang [1 ]
Liu, Xingtong [1 ]
机构
[1] Wuhan Univ, Sch Power & Mech Engn, Hubei Key Lab Accoutrement Tech Fluid Machinery &, Wuhan 430072, Hubei, Peoples R China
[2] Shanghai Jiao Tong Univ, Sch Mech Engn, State Key Lab Mech Syst & Vibrat, Shanghai 200240, Peoples R China
[3] Xiamen Changelight Co Ltd, Xiamen 361000, Peoples R China
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2018年 / 215卷 / 10期
基金
中国国家自然科学基金;
关键词
alternating current; light-emitting diodes; wall-plug efficiency; wheatstone bridge; LEDS; POWER;
D O I
10.1002/pssa.201700554
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, one type of direct current high voltage light-emitting diode (DC-HV LED) and six types of alternating current high voltage LEDs (AC-HV LEDs) are demonstrated. Comparative current-voltage (I-V) and light output power (LOP)-current (L-I) characteristics are performed between 24V DC-HV LED and 24V AC-HV LEDs with eight working cells. The AC-HV LED has relatively larger wall-plug efficiency (WPE) than DC-HV LED over a current density range from 0 to 152Acm(-2). The effect of the layouts on the optical and electrical properties of AC-HV LEDs is further investigated. Owing to larger heat dissipation area and fewer number of chips, our combined numerical and experimental results demonstrate that the AC-HV LED I has a more favorable current spreading uniformity compared to other AC-HV LEDs. In addition, it is found that the LOP of AC-HV LEDs is dependent on both the number of working cells and the ratio of radiation area to total chip area. Larger ratio of light emission area to total chip area can be obtained by decreasing the area of rectifier cells. Therefore, in order to achieve a much higher LOP, AC-HV LEDs have to be designed with smaller area of rectifier cells and with more working cells simultaneously.
引用
收藏
页数:7
相关论文
共 31 条
[1]   GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions [J].
Akyol, Fatih ;
Krishnamoorthy, Sriram ;
Zhang, Yuewei ;
Rajan, Siddharth .
APPLIED PHYSICS EXPRESS, 2015, 8 (08)
[2]  
Ao JP, 2002, PHYS STATUS SOLIDI A, V194, P376, DOI 10.1002/1521-396X(200212)194:2<376::AID-PSSA376>3.0.CO
[3]  
2-3
[4]  
Chiang Y. C., 2014, INT J PHOTOENERGY, V2014, P1
[5]   Alternating-current light emitting diodes with a diode bridge circuitry [J].
Cho, Jaehee ;
Jung, Jaewook ;
Chae, Jung Hye ;
Kim, Hyungkun ;
Kim, Hyunsoo ;
Lee, Jeong Wook ;
Yoon, Sukho ;
Sone, Cheolsoo ;
Jang, Taehoon ;
Park, Yongjo ;
Yoon, Euijoon .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (45-49) :L1194-L1196
[6]   Effect of curved graphene oxide in a GaN light-emitting-diode for improving heat dissipation with a patterned sapphire substrate [J].
Han, Min ;
Han, Nam ;
Jung, EunJin ;
Ryu, Beo Deul ;
Ko, Kang Bok ;
Tran Viet Cuong ;
Kim, Hyunsoo ;
Kim, Jong Kyu ;
Hong, Chang-Hee .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (08)
[7]   Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes [J].
Hu, Hongpo ;
Zhou, Shengjun ;
Liu, Xingtong ;
Gao, Yilin ;
Gui, Chengqun ;
Liu, Sheng .
SCIENTIFIC REPORTS, 2017, 7
[8]   Method for measuring the mean junction temperature of alternating current light-emitting diodes [J].
Hwu, F. S. ;
Yang, C. H. ;
Chen, J. C. .
MEASUREMENT SCIENCE AND TECHNOLOGY, 2011, 22 (04)
[9]   Optoelectronic and thermal characteristics of GaN-based monolithic light emitting diode arrays [J].
Lee, Hee Kwan ;
Yu, Jae Su .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 26 (09)
[10]   Small GaN-based light-emitting diodes with a single electrode pad fabricated on a sapphire substrate [J].
Lee, Y. C. ;
Lee, C. E. ;
Lu, T. C. ;
Kuo, H. C. ;
Wang, S. C. .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (04)