Image sensor for spectral-domain optical coherence tomography on a chip

被引：4

作者：

Vlaskovic, M. ^{[1
]}

Zimmermann, H. ^{[2
]}

Meinhardt, G. ^{[1
]}

Kraft, J. ^{[1
]}

机构：

[1] Ams AG, Premstaetten, Austria

[2] Vienna Univ Technol, Inst Electrodynam Microwave & Circuit Engn, Vienna, Austria

来源：

ELECTRONICS LETTERS | 2020年 / 56卷 / 24期

关键词：

optical waveguides; p-i-n photodiodes; optical tomography; CMOS image sensors; integrated optoelectronics; optical crosstalk; optical noise; size; 0; 35; mum; wavelength; 800; 0 nm to 900; nm; photon-transfer curve method; crosstalk; detector efficiency; chip; electronics; doped epitaxial starting material; image sensor parameters; fully depleted photodiodes; 35 mu m high voltage CMOS; low-power consumption; frame rate; signal-to-noise ratio; peak responsivity; photonic layer; spectral domain; PIN photodiodes; global shutter image sensor; spectral-domain optical coherence tomography;

D O I：

10.1049/el.2020.1898

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This Letter presents a global shutter image sensor based on PIN photodiodes intended to be used for optical coherence tomography (OCT) in the spectral domain, where the light is brought to the photodiodes via optical waveguides monolithically integrated on top of electronics in a photonic layer. Photodiodes are optimised to have the peak responsivity in the wavelength range between 800 and 900 nm, while the main features of electronics are high signal-to-noise ratio, high frame rate, low-power consumption and low noise. The sensor is designed using 0.35 mu m high voltage CMOS and employing low doped epitaxial starting material in order to improve the detector efficiency by enabling fully depleted photodiodes and lowering the crosstalk. Image sensor parameters are obtained using the photon-transfer curve method and compared with commercial cameras for OCT.

引用

页码：1306 / 1309

页数：3

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