Influence of the initial surface state on the ripple formation induced by O2+ sputtering of Si

被引：0
作者：
Smirnova, M. A. [1 ]
Bachurin, V. I.
Churilov, A. B. [1 ]
机构：
[1] PG Demidov Yaroslavl State Univ, Yaroslavl, Russia
来源：
ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2022年 / 15卷 / 03期
关键词：
ripple formation; sputtering; nanostructuring; silicon; ion beam; SILICON; TOPOGRAPHY; OXYGEN;
D O I：
10.18721/JPM.153.301
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
masha_19957@mail.ru Abstract. Influence of the initial Si surface state on the rate of ripple nucleation under bom-bardment with low-energy O2+ ions was investigated. It was found that the creation of a defect area in the Si near-surface layer or the creation of the initial surface relief by ion bombardment with a focused Ga+ ion beam facilitates a significant acceleration of the ripple nucleation on the Si surface during subsequent irradiation with an O2+ ion beam.
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页码：8 / 12
页数：5
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