Effect of hydrogen implantation on the graphite used in high pressure diamond synthesis

被引：19

作者：

Kindlein, W

Livi, RP

Balzaretti, NM

da Jornada, JAH ^{[1
]}

机构：

[1] UFRGS, Inst Fis, Porto Alegre, RS, Brazil

[2] UFRGS, Escola Engn, Dept Mat, BR-91501970 Porto Alegre, RS, Brazil

来源：

关键词：

graphite; high pressure diamond synthesis; hydrogen; implantation;

D O I：

10.1016/S0925-9635(99)00191-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The objective of the present work is to investigate the effect of hydrogen implantation on graphite in the high pressure diamond synthesis. A comparison of the graphite/diamond conversion for different fluences of hydrogen implantation revealed that the diamond nucleation and the total mass yield are always higher (up to 46%) than in experiments without implantation. The maximum nucleation for the studied cases occurred at a fluence of 1 x 10(17) hydrogen ions/cm(2). This behavior is not observed when other ions, such as krypton and argon, are implanted on the graphite, or when hydrogen is present in the reaction cell but not implanted on the graphite. The results were interpreted as a consequence of the creation of additional tetrahedral sp(3) bonded carbon atoms when the graphite is hydrogen implanted, which would act as effective diamond nucleation sites in the high pressure synthesis. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：22 / 25

页数：4

共 15 条

[1] A STUDY OF GRAPHITE DIAMOND CONVERSION USING NICKEL, INVAR AND MONEL AS CATALYST-SOLVENTS [J].