Cascading structure of LDMOS and LIGBT for increasing the forward biased safe operating area

被引：2

作者：

Lee, SC

Oh, JK

Kim, SS

Han, MK

Choi, YI

机构：

[1] Seoul Natl Univ, Sch Elect Engn, Kwanak Gu, Seoul 151742, South Korea

[2] Ajou Univ, Sch Elect Engn, Suwon 442749, South Korea

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 10期

关键词：

LIGBT; LDMOS; FBSOA; SOI;

D O I：

10.1016/S0038-1101(02)00104-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a new device structure is proposed to suppress parasitic latch-up effectively and also improve the turn-off characteristic by cascading the drain of lateral double diffused MOSFET (LDMOS) to the cathode of lateral insulated gate bipolar transistor (LIGBT). The forward biased safe operating area of proposed device is large because the parasitic thyristor latch-up is eliminated even in high voltage exceeding 200 V by current saturation of LDMOS. Also switching speed is improved considerably compared with conventional LIGBT. The device characteristics is verified by two-dimensional simulation (MEDICI). (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：1553 / 1556

页数：4