Synthesis of high quality crystalline C-N films on silicon

被引:22
作者
Chen, Y
Wang, EG
Chen, F
Guo, LP
机构
[1] CHINESE ACAD SCI,STATE KEY LAB,BEIJING 100080,PEOPLES R CHINA
[2] CHINESE ACAD SCI,INST PHYS,BEIJING 100080,PEOPLES R CHINA
[3] CHINESE ACAD SCI,NATL LAB SUPERCONDUCT,BEIJING 100080,PEOPLES R CHINA
来源
MODERN PHYSICS LETTERS B | 1996年 / 10卷 / 12期
关键词
D O I
10.1142/S0217984996000626
中图分类号
O59 [应用物理学];
学科分类号
摘要
High quality crystalline C-N films have been synthesized via hot filament chemical vapor deposition using a gas mixture of nitrogen and methane. Scanning electron microscopy images show that a high density of crystalline clusters has been achieved. The clusters are composed of small columnar crystals (20-200 nm across) with hexagonal facets. Energy dispersive X ray analysis indicates a relative nitrogen:carbon composition of 1.30-2.5. X ray diffraction results indicate the films composed of beta- and alpha-C3N4 phases. Together with transmission electron microscopy analyses, we suggest that an interfacial layer C3-xSixN4 is formed between the silicon substrate and the crystalline carbon-nitride films.
引用
收藏
页码:567 / 571
页数:5
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