An Analytical Surface Potential Model For Pocket Implanted Sub-100 nm n-MOSFET

被引：3
|
作者：
Bhuyan, Muhibul Haque [1 ,2 ]
Khosru, Quazi D. M. [2 ]
机构：
[1] Daffodil Int Univ, Dept Elect & Telecommun Engn, Dhaka, Bangladesh
[2] Bangladesh Univ Engn & Technol, Dept Elect & Elect Engn, Dhaka, Bangladesh
来源：
PROCEEDINGS OF ICECE 2008, VOLS 1 AND 2 | 2008年
关键词：
SUBTHRESHOLD;
D O I：
10.1109/ICECE.2008.4769248
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
This paper presents an analytical surface potential model for pocket implanted sub-100 nm n-MOSFET. The model is derived by solving the Poisson's equation in the depletion region at the surface with the appropriate boundary conditions at source and drain. The model includes the effective doping concentration of the two linear pocket profiles at the source and drain sides of the device. The model also incorporates the drain and substrate bias effect below and above threshold conditions. The simulation results show that the derived surface potential model has a simple compact form that can be utilized to study and characterize the pocket implanted advanced ULSI devices.
引用
收藏
页码：442 / +
页数：2
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