Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well

被引：20
作者：
Dolgopolov, VT [1 ]
Deviatov, EV
Shashkin, AA
Wieser, U
Kunze, U
Abstreiter, G
Brunner, K
机构：
[1] Inst Solid State Phys, Chernogolovka 142432, Russia
[2] Ruhr Univ Bochum, D-44780 Bochum, Germany
[3] Tech Univ Munich, Walter Schottky Inst, W-8046 Garching, Germany
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2003年 / 33卷 / 5-6期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1016/j.spmi.2004.02.003
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote doping that determines the transport scattering time. Measurements of the mobility in this strongly-interacting electron system with remote-doping scattering allow us to arrive at a conclusion that the Hubbard form underestimates the local field corrections by about a factor of 2. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：271 / 278
页数：8
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