Etch characteristics of HfO2 films on Si substrates

被引:50
作者
Norasetthekul, S [1 ]
Park, PY [1 ]
Baik, KH [1 ]
Lee, KP [1 ]
Shin, JH [1 ]
Jeong, BS [1 ]
Shishodia, V [1 ]
Norton, DP [1 ]
Pearton, ST [1 ]
机构
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
关键词
etch rates; HfO2; films; Si substrates; plasma;
D O I
10.1016/S0169-4332(01)00792-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The etch rates and mechanisms for HfO2 thin films in Cl-2-, SF6- or CH4/H-2-based plasmas were measured as a function of source power. r.f. chuck power and discharge composition. Both Cl-2- and SF6-based plasmas produced some degree of chemical enhancement in the etch mechanism. Selectivities between 0.2 and 5 were obtained for Si over HfO, in these two plasma chemistries. High fidelity pattern transfer was achieved for photoresist-masked HfO2/Si structures etched with Cl-2/Ar over a broad range of pressures or with SF6/Ar at low pressures. The surface morphologies of both HfO2 and Si were smooth over a wide range of etching conditions. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:75 / 81
页数:7
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