Etch characteristics of HfO2 films on Si substrates

被引：50

作者：

Norasetthekul, S ^{[1
]}

Park, PY ^{[1
]}

Baik, KH ^{[1
]}

Lee, KP ^{[1
]}

Shin, JH ^{[1
]}

Jeong, BS ^{[1
]}

Shishodia, V ^{[1
]}

Norton, DP ^{[1
]}

Pearton, ST ^{[1
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

APPLIED SURFACE SCIENCE | 2002年 / 187卷 / 1-2期

关键词：

etch rates; HfO2; films; Si substrates; plasma;

D O I：

10.1016/S0169-4332(01)00792-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The etch rates and mechanisms for HfO2 thin films in Cl-2-, SF6- or CH4/H-2-based plasmas were measured as a function of source power. r.f. chuck power and discharge composition. Both Cl-2- and SF6-based plasmas produced some degree of chemical enhancement in the etch mechanism. Selectivities between 0.2 and 5 were obtained for Si over HfO, in these two plasma chemistries. High fidelity pattern transfer was achieved for photoresist-masked HfO2/Si structures etched with Cl-2/Ar over a broad range of pressures or with SF6/Ar at low pressures. The surface morphologies of both HfO2 and Si were smooth over a wide range of etching conditions. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：75 / 81

页数：7

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