Amorphous carbon films rich in diamond deposited by magnetron sputtering

被引:33
作者
Logothetidis, S
Gioti, M
机构
[1] Department of Physics, Aristotle University of Thessaloniki
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 46卷 / 1-3期
关键词
carbon films; magnetron sputtering; spectroscopic ellipsometry; stress measurements;
D O I
10.1016/S0921-5107(97)00009-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work evidence is presented that unhydrogenated amorphous carbon films approaching diamond can be deposited by rf magnetron sputtering at room temperature. In situ spectroscopic ellipsometry (SE) studies, performed in the energy range 1.5-5.5 eV, have been used to monitor and characterize the films during deposition, as well as to define the range of deposition conditions which produce films rich in sp(3) C-C bonds. The internal stress developed in these films during deposition was also measured by the cantilever laser technique. A strong dependence was found between the sp(3) volume fraction, calculated by analyzing the SE data, and the internal stress in the films. The effects of bias voltage and thickness on the film stress were also examined and are discussed. It was finally observed that films beyond a critical thickness and with an internal stress level above 6-7 GPa became metastable when exposed to air at atmospheric pressure. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:119 / 123
页数:5
相关论文
共 13 条
[1]   OPTICAL-PROPERTIES OF THIN-FILMS [J].
ASPNES, DE .
THIN SOLID FILMS, 1982, 89 (03) :249-262
[2]  
Azzam R., 1977, ELLIPSOMETRY POLARIZ
[3]   MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE [J].
JACCODINE, RJ ;
SCHLEGEL, WA .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2429-+
[4]   SUBSTANTIATION OF SUBPLANTATION MODEL FOR DIAMOND-LIKE FILM GROWTH BY ATOMIC-FORCE MICROSCOPY [J].
LIFSHITZ, Y ;
LEMPERT, GD ;
GROSSMAN, E .
PHYSICAL REVIEW LETTERS, 1994, 72 (17) :2753-2756
[5]   Hydrogen-free amorphous carbon films approaching diamond prepared by magnetron sputtering [J].
Logothetidis, S .
APPLIED PHYSICS LETTERS, 1996, 69 (02) :158-160
[6]   The optical properties of a-C:H films between 1.5 and 10 eV and the effect of thermal annealing on the film character [J].
Logothetidis, S ;
Petalas, J ;
Ves, S .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (02) :1040-1050
[7]   FILTERED ARC DEPOSITION OF AMORPHOUS DIAMOND [J].
LOSSY, R ;
PAPPAS, DL ;
ROY, RA ;
CUOMO, JJ .
APPLIED PHYSICS LETTERS, 1992, 61 (02) :171-173
[8]   COMPRESSIVE-STRESS-INDUCED FORMATION OF THIN-FILM TETRAHEDRAL AMORPHOUS-CARBON [J].
MCKENZIE, DR ;
MULLER, D ;
PAILTHORPE, BA .
PHYSICAL REVIEW LETTERS, 1991, 67 (06) :773-776
[9]   SYNTHESIS, STRUCTURE AND APPLICATIONS OF AMORPHOUS DIAMOND [J].
MCKENZIE, DR ;
MULLER, DA ;
KRAVTCHINSKAIA, E ;
SEGAL, D ;
COCKAYNE, DJH ;
AMARATUNGA, G ;
SILVA, R .
THIN SOLID FILMS, 1991, 206 (1-2) :198-203
[10]   RAMAN-SCATTERING CHARACTERIZATION OF CARBON BONDING IN DIAMOND AND DIAMONDLIKE THIN-FILMS [J].
NEMANICH, RJ ;
GLASS, JT ;
LUCOVSKY, G ;
SHRODER, RE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1988, 6 (03) :1783-1787