Research progress on the numerical simulation of transport process in vertical Bridgman crystal growth

被引：0

作者：

Zhang, HB ^{[1
]}

Shen, DZ ^{[1
]}

Ren, GH ^{[1
]}

Gong, B ^{[1
]}

机构：

[1] Acad Sinica, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

来源：

JOURNAL OF INORGANIC MATERIALS | 2002年 / 17卷 / 05期

关键词：

vertical Bridgman method; transport process; numerical simulation;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper overall and systematically reviews the research progress on the numerical simulation of transport process in the vertical Bridgman crystal growth in the last twenty years, and summarises in brief moreover. It reveals the development state by calculation technology to study crystal growth process.

引用

页码：910 / 914

页数：5

共 25 条

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