A Body-biased Wide-band VCO

被引:0
作者
Chen, Hwan-Mei [1 ]
Jhuang, You-Da [1 ]
Chen, Shih-Wei [1 ]
机构
[1] Lunghwa Univ Sci & Technol, Dept Elect Engn, Guishan Shiang 33306, Taoyuan County, Taiwan
来源
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a 3.24GHz similar to 4.56GHz wide-band voltage-controlled oscillator (VCO) fabricated in a 0.18 mu m 1P6M CMOS process is presented. This VCO is designed with a CMOS complementary -Gm oscillator topology, features two accumulation mode MOS varactors, and body-biased pMOSs. With 1.8 V power supply, when center frequency is 3.547GHz, the phase noise is -119.2dBc/Hz at 1MHz offset. The oscillation frequency can be tuned from 3.24GHz to 4.46GHz. The best Figure of Merit (FoM) is -181.18dB, the maximum power consumption is 16.2mW.
引用
收藏
页码:1585 / 1588
页数:4
相关论文
共 13 条
[11]  
Razavi B., 2017, DESIGN ANALOG CMOS I
[12]  
RAZAVI B, 1998, RF MICROTRONICS
[13]  
TSIVIDIS YP, 1987, OPERATION MODELING M, pCH2