Excimer-laser ablation and micro-patterning of ceramic Si3N4

被引:39
|
作者
Heitz, J [1 ]
Pedarnig, JD [1 ]
Bauerle, D [1 ]
Petzow, G [1 ]
机构
[1] MPI MET FORSCH,INST WERKSTOFFWISSENSCH,D-70569 STUTTGART,GERMANY
来源
关键词
D O I
10.1007/s003390050575
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Excimer-laser ablation and micro-patterning of ceramic Si3N4 has been investigated. The ablation threshold in air, Phi(th), is around 0.3 +/- 0.1 J/cm(2) with ArF- and 0.9 +/- 0.2 J/cm(2) with KrF-laser radiation. With fluences Phi(th) < Phi less than or equal to 4 J/cm(2) the irradiated surface is either very flat or it ex hibits a cone-type structure, depending on the number of laser pulses employed. With fluences of 5 to 10 J/cm(2), the sample surface becomes very smooth, much smoother than the original mechanically polished surface. Pores, scratches, and cracks observed on the non-irradiated surface are absent within the illuminated area. In this regime, the ablation rates are typically 0.1 to 0.2 mu m/pulse.
引用
收藏
页码:259 / 261
页数:3
相关论文
共 50 条
  • [1] Excimer-laser ablation and micro-patterning of ceramic Si3N4
    J. Heitz
    J.D. Pedarnig
    D. Bäuerle
    G. Petzow
    Applied Physics A, 1997, 65 : 259 - 261
  • [2] Excimer-laser ablation and micro-patterning of ceramic Si3N4
    Johannes-Kepler-Universitat Linz, Linz, Austria
    Appl Phys A, 3 (259-261):
  • [3] CHARACTERIZATION OF SI3N4 SURFACE AFTER EXCIMER-LASER RADIATION
    AKIMUNE, Y
    AKIBA, T
    HIROSAKI, N
    DICKINSON, JT
    NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1995, 103 (02): : 128 - 131
  • [4] EXCIMER-LASER ABLATION PATTERNING OF DIELECTRIC LAYERS
    IHLEMANN, J
    WOLFFROTTKE, B
    APPLIED SURFACE SCIENCE, 1995, 86 (1-4) : 228 - 233
  • [5] PARTICLE-EMISSION FROM SI3N4 SURFACE BY EXCIMER-LASER RADIATION
    AKIBA, T
    AKIMUNE, Y
    HIROSAKI, N
    DICKINSON, JT
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1995, 14 (12) : 898 - 900
  • [6] SURFACE ALTERATION OF AMORPHOUS SI3N4 FILMS BY ARF EXCIMER-LASER IRRADIATION
    NAKAMAE, K
    KUROSAWA, K
    TAKIGAWA, Y
    SASAKI, W
    IZAWA, Y
    OKUDA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (11A): : L1482 - L1485
  • [7] PATTERNING OF YBCO FILMS BY EXCIMER-LASER ABLATION
    PROYER, S
    STANGL, E
    SCHWAB, P
    BAUERLE, D
    SIMON, P
    JORDAN, C
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 58 (05): : 471 - 474
  • [8] EXCIMER LASER MIXING OF TI LAYERS ON SI3N4 CERAMIC SUBSTRATES
    JERVIS, TR
    NASTASI, M
    HUBBARD, KM
    APPLIED PHYSICS LETTERS, 1992, 60 (07) : 912 - 914
  • [9] SILICON PRECIPITATION INDUCED BY ARGON EXCIMER-LASER IN SURFACE-LAYERS OF SI3N4
    OHMUKAI, M
    NAITO, H
    OKUDA, M
    KUROSAWA, K
    SASAKI, W
    MATSUSHITA, T
    TSUNAWAKI, Y
    NOZAWA, S
    IGARASHI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (8A): : L1062 - L1065
  • [10] Ultra-violet excimer laser micro-patterning of polymers
    Kancharla, Vijay V.
    Chen, Shaochen
    American Society of Mechanical Engineers, Manufacturing Engineering Division, MED, 2000, 11 : 947 - 949