Improved interface properties of p-type 6H-SiC/SiO2 system by NH3 pretreatment

被引：19
|
作者：
Xu, JP [1 ]
Lai, PT
Chan, CL
Cheng, YC
机构：
[1] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China
[2] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 03期
关键词：
All Open Access; Green;
D O I：
10.1063/1.126120
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Effects of preoxidation NH3 treatment on p-type 6H-SiC/SiO2 interface properties were investigated as compared to conventional thermally oxidized devices. It was found that NH3 treatment before oxidation can reduce the SiC/SiO2 interface states and fixed oxide charge. Furthermore, less shift of flatband voltage, and smaller increases of effective oxide charge and interface states during high-field stress were observed for the NH3 pretreated devices. (C) 2000 American Institute of Physics. [S0003-6951(00)01803-9].
引用
收藏
页码：372 / 374
页数：3
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