Improved interface properties of p-type 6H-SiC/SiO2 system by NH3 pretreatment

被引：19
|
作者：
Xu, JP [1 ]
Lai, PT
Chan, CL
Cheng, YC
机构：
[1] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China
[2] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 03期
关键词：
All Open Access; Green;
D O I：
10.1063/1.126120
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Effects of preoxidation NH3 treatment on p-type 6H-SiC/SiO2 interface properties were investigated as compared to conventional thermally oxidized devices. It was found that NH3 treatment before oxidation can reduce the SiC/SiO2 interface states and fixed oxide charge. Furthermore, less shift of flatband voltage, and smaller increases of effective oxide charge and interface states during high-field stress were observed for the NH3 pretreated devices. (C) 2000 American Institute of Physics. [S0003-6951(00)01803-9].
引用
收藏
页码：372 / 374
页数：3
相关论文
共 50 条
  • [31] Effects of chlorine on interfacial properties and reliability of SiO2 grown on 6H-SiC
    J.P. Xu
    P.T. Lai
    H.P. Wu
    C.L. Chan
    Applied Physics A, 2005, 81 : 173 - 176
  • [32] Hydrogen passivation in n- and p-type 6H-SiC
    Ren, F
    Grow, JM
    Bhaskaran, M
    Wilson, RG
    Pearton, SJ
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) : 198 - 202
  • [33] P-type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates
    Lebedev, S. P.
    Lebedev, A. A.
    Abramov, P. L.
    Bogdanova, E. V.
    Nel'son, D. K.
    Oganesyan, G. A.
    Tregubova, A. S.
    Yakimova, R.
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 177 - 180
  • [34] Electrical characterisation of MNOS devices on p-type 6H-SiC
    Berberich, S
    Godignon, P
    Millán, J
    Planson, D
    Hartnagel, HL
    Senes, A
    DIAMOND AND RELATED MATERIALS, 1999, 8 (2-5) : 305 - 308
  • [35] Hydrogen passivation in n- and p-type 6H-SiC
    F. Ren
    J. M. Grow
    M. Bhaskaran
    R. G. Wilson
    S. J. Pearton
    Journal of Electronic Materials, 1997, 26 : 198 - 202
  • [36] Electrical characterization of MNOS devices on p-type 6H-SiC
    Berberich, S.
    Godignon, P.
    Millan, J.
    Planson, D.
    Hartnagel, H.L.
    Senes, A.
    Diamond and Related Materials, 1999, 8 (02): : 305 - 308
  • [37] Positron annihilation at proton-induced defects in 6H-SiC/SiC and 6H-SiC/SiO2/Si structures
    Barthe, MF
    Henry, L
    Corbel, C
    Blondiaux, G
    Saarinen, K
    Hautojärvi, P
    Hugonnard, E
    Di Cioccio, L
    Letertre, F
    Ghyselen, B
    PHYSICAL REVIEW B, 2000, 62 (24) : 16638 - 16644
  • [38] Passivation of interface traps in MOS-devices on n- and p-type 6H-SiC
    vonKamienski, EGS
    Leonhard, C
    Scharnholz, S
    Golz, A
    Kurz, H
    DIAMOND AND RELATED MATERIALS, 1997, 6 (10) : 1497 - 1499
  • [39] SiO2/6H-SiC(0001)3x3 initial interface formation by Si overlayer oxidation
    Amy, F
    Soukiassian, P
    Hwu, YK
    Brylinski, C
    APPLIED PHYSICS LETTERS, 1999, 75 (21) : 3360 - 3362
  • [40] Structure of thermally grown SiO2 on crystalline 6H-SiC
    Tsuchida, H
    Kamata, I
    Izumi, K
    AMORPHOUS AND CRYSTALLINE INSULATING THIN FILMS - 1996, 1997, 446 : 273 - 278
12345