Improved interface properties of p-type 6H-SiC/SiO2 system by NH3 pretreatment

被引：19
|
作者：
Xu, JP [1 ]
Lai, PT
Chan, CL
Cheng, YC
机构：
[1] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China
[2] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 03期
关键词：
All Open Access; Green;
D O I：
10.1063/1.126120
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Effects of preoxidation NH3 treatment on p-type 6H-SiC/SiO2 interface properties were investigated as compared to conventional thermally oxidized devices. It was found that NH3 treatment before oxidation can reduce the SiC/SiO2 interface states and fixed oxide charge. Furthermore, less shift of flatband voltage, and smaller increases of effective oxide charge and interface states during high-field stress were observed for the NH3 pretreated devices. (C) 2000 American Institute of Physics. [S0003-6951(00)01803-9].
引用
收藏
页码：372 / 374
页数：3
相关论文
共 50 条
  • [1] Improved ohmic contacts to p-type 6H-SiC
    Spiess, L
    Nennewitz, O
    Pezoldt, J
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 585 - 588
  • [2] Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO
    Lai, PT
    Xu, JP
    Li, CX
    Chan, CL
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 81 (01): : 159 - 161
  • [3] Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO
    P.T. Lai
    J.P. Xu
    C.X. Li
    C.L. Chan
    Applied Physics A, 2005, 81 : 159 - 161
  • [4] Electrical characterisation of Si3N4/SiO2 double layers on p-type 6H-SiC
    Berberich, S
    Godignon, P
    Morvan, E
    Fonseca, L
    Millán, J
    Hartnagel, HL
    MICROELECTRONICS RELIABILITY, 2000, 40 (4-5) : 833 - 836
  • [5] Deep states in SiO2/p-type 4H-SiC interface
    Kyoto Univ, Kyoto, Japan
    Materials Science Forum, 1998, 264-268 (pt 2): : 841 - 844
  • [6] Deep states in SiO2/p-type 4H-SiC interface
    Yano, H
    Inoue, N
    Kimoto, T
    Matsunami, H
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 841 - 844
  • [7] Electronic properties of boron in p-type bulk 6H-SiC
    Mitchel, WC
    Roth, M
    Evwaraye, AO
    Yu, PW
    Smith, SR
    JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (05) : 863 - 867
  • [8] Deep interface states in SiO2/p-type α-SiC structure
    Inoue, Naoya
    Kimoto, Tsunenobu
    Yano, Hiroshi
    Matsunami, Hiroyuki
    Japanese Journal of Applied Physics, Part 2: Letters, 1997, 36 (11 A):
  • [9] High resolution photoemission study of the 6H-SiC/SiO2 interface
    Universitaet Erlangen-Nuernberg, Erlangen, Germany
    Materials Science Forum, 1998, 264-268 (pt 1): : 375 - 378
  • [10] High resolution photoemission study of the 6H-SiC/SiO2 interface
    Mattern, B
    Bassler, M
    Pensl, G
    Ley, L
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 375 - 378
12345