A poly-Si TFT fabricated by excimer laser recrystallization on floating active structure

被引：43

作者：

Kim, CH ^{[1
]}

Song, IH ^{[1
]}

Nam, WJ ^{[1
]}

Han, MK ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 06期

关键词：

active structure; air-gap; excimer laser annealing (ELA); floating active structure; lateral grain; poly-Si; thin-film transistors (TFTs);

D O I：

10.1109/LED.2002.1004220

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports a new excimer laser annealing (ELA) method to produce large polycrystalline silicon (poly-Si) lateral grains exceeding 4 mum. A selectively floating amorphous silicon (a-Si) film with a 50 nm-thick air-gap was irradiated by a single-pulse XeCl excimer laser and uniform lateral grains were grown due to the lateral thermal gradient caused by the low thermal conductivity of the air. A poly-Si thin-film transistor (TFT) with two high-quality 4.6 mum-long lateral grains was fabricated by employing the proposed ELA and high field-effect mobility of 331 cm(2)/Vsec was obtained due to the high-quality grain structure.

引用

页码：315 / 317

页数：3

共 12 条

[1] Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors [J].

Angelis, CT ;

Dimitriadis, CA ;

Miyasaka, M ;

Farmakis, FV ;

Kamarinos, G ;

Brini, J ;

Stoemenos, J .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) :4600-4606

[2] DRASTIC ENLARGEMENT OF GRAIN-SIZE OF EXCIMER-LASER-CRYSTALLIZED POLYSILICON FILMS [J].

CHOI, DH ;

SHIMIZU, K ;

SUGIURA, O ;

MATSUMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12B) :4545-4549

[3] Low-temperature single-crystal Si TFT's fabricated on Si films processed via sequential lateral solidification [J].

Crowder, MA ;

Carey, PG ;

Smith, PM ;

Sposili, RS ;

Cho, HS ;

Im, JS .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (08) :306-308

[4] High-performance thin-film transistors fabricated using excimer laser processing and grain engineering [J].

Giust, GK ;

Sigmon, TW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (04) :925-932

[5] Single-crystal Si films for thin-film transistor devices [J].

Im, JS ;

Sposili, RS ;

Crowder, MA .

APPLIED PHYSICS LETTERS, 1997, 70 (25) :3434-3436

[6] PHASE-TRANSFORMATION MECHANISMS INVOLVED IN EXCIMER-LASER CRYSTALLIZATION OF AMORPHOUS-SILICON FILMS [J].

IM, JS ;

KIM, HJ ;

THOMPSON, MO .

APPLIED PHYSICS LETTERS, 1993, 63 (14) :1969-1971

[7]

Incropera F. P., Introduction to Heat Transfer, Vfourth

[8] A new poly-Si TFT with selectively doped channel fabricated by novel excimer laser annealing [J].

Jeon, JH ;

Lee, MC ;

Park, KC ;

Jung, SH ;

Han, MK .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :213-216

[9] LATERAL GRAIN-GROWTH OF POLY-SI FILMS WITH A SPECIFIC ORIENTATION BY AN EXCIMER-LASER ANNEALING METHOD [J].

KURIYAMA, H ;

NOHDA, T ;

ISHIDA, S ;

KUWAHARA, T ;

NOGUCHI, S ;

KIYAMA, S ;

TSUDA, S ;

NAKANO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12B) :6190-6195

[10] A proposed single grain-boundary thin-film transistor [J].

Oh, CH ;

Matsumura, M .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (01) :20-22

← 1 2 →