Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory

被引：105

作者：

Bai, Yue ^{[1
]}

Wu, Huaqiang ^{[1
,2
]}

Wu, Riga ^{[3
]}

Zhang, Ye ^{[1
]}

Deng, Ning ^{[1
]}

Yu, Zhiping ^{[1
]}

Qian, He ^{[1
,2
]}

机构：

[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China

[2] Tsinghua Natl Lab Informat Sci & Technol TNList, Beijing 100084, Peoples R China

[3] Inner Mongolia Univ, Hohhot 010021, Inner Mongolia, Peoples R China

来源：

SCIENTIFIC REPORTS | 2014年 / 4卷

关键词：

DEVICES; RERAM;

D O I：

10.1038/srep05780

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Three-dimensional (3D) integration and multi-level cell (MLC) are two attractive technologies to achieve ultra-high density for mass storage applications. In this work, a three-layer 3D vertical AlO delta/Ta2O5-x/TaOy resistive random access memories were fabricated and characterized. The vertical cells in three layers show good uniformity and high performance (e.g. >1000X HRS/LRS windows, >10(10) endurance cycles, >10(4) s retention times at 125 degrees C). Meanwhile, four level MLC is demonstrated with two operation strategies, current controlled scheme (CCS) and voltage controlled scheme (VCS). The switching mechanism of 3D vertical RRAM cells is studied based on temperature-dependent transport characteristics. Furthermore, the applicability of CCS and VCS in 3D vertical RRAM array is compared using resistor network circuit simulation.

引用

页数：7

共 36 条

[1] A novel randomly textured phosphor structure for highly efficient white light-emitting diodes [J].

Chen, Hsin Chu ;

Chen, Kuo Ju ;

Wang, Chao Hsun ;

Lin, Chien Chung ;

Yeh, Chia Chi ;

Tsai, Hsin Han ;

Shih, Min Hsiung ;

Kuo, Hao Chung ;

Lu, Tien Chang .

NANOSCALE RESEARCH LETTERS, 2012, 7 :1-5

[2] Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories [J].

Chen, Jui-Yuan ;

Hsin, Cheng-Lun ;

Huang, Chun-Wei ;

Chiu, Chung-Hua ;

Huang, Yu-Ting ;

Lin, Su-Jien ;

Wu, Wen-Wei ;

Chen, Lih-Juann .

NANO LETTERS, 2013, 13 (08) :3671-3677

[3]

Chen Y.-C., 2003, IEEE INT EL DEV M 20

[4] Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch [J].

Choi, Byung Joon ;

Torrezan, Antonio C. ;

Norris, Kate J. ;

Miao, Feng ;

Strachan, John Paul ;

Zhang, Min-Xian ;

Ohlberg, Douglas A. A. ;

Kobayashi, Nobuhiko P. ;

Yang, J. Joshua ;

Williams, R. Stanley .

NANO LETTERS, 2013, 13 (07) :3213-3217

[5] Random telegraph noise and resistance switching analysis of oxide based resistive memory [J].

Choi, Shinhyun ;

Yang, Yuchao ;

Lu, Wei .

NANOSCALE, 2014, 6 (01) :400-404

[6] SCHOTTKY EMISSION THROUGH THIN INSULATING FILMS [J].

EMTAGE, PR ;

TANTRAPORN, W .

PHYSICAL REVIEW LETTERS, 1962, 8 (07) :267-&

[7]

Goda A, 2012, 2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)

[8] Electronic structure and transport measurements of amorphous transition-metal oxides: observation of Fermi glass behavior [J].

Goldfarb, I. ;

Miao, F. ;

Yang, J. Joshua ;

Yi, W. ;

Strachan, J. P. ;

Zhang, M-X. ;

Pickett, M. D. ;

Medeiros-Ribeiro, G. ;

Williams, R. Stanley .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2012, 107 (01) :1-11

[9] Evolution of conduction channel and its effect on resistance switching for Au-WO3-x-Au devices [J].

Hong, D. S. ;

Chen, Y. S. ;

Li, Ying ;

Yang, H. W. ;

Wei, L. L. ;

Shen, B. G. ;

Sun, J. R. .

SCIENTIFIC REPORTS, 2014, 4

[10]

Hsu CW, 2013, 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)

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