A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: Part II (low frequencies)

被引：22

作者：

Djezzar, B ^{[1
]}

Smatti, A ^{[1
]}

Oussalah, S ^{[1
]}

机构：

[1] Ctr Dev Technol Avancees, Microelect Div, Algiers 16303, Algeria

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 04期

关键词：

charge-pumping; MOSFETs; oxide-tap based on charge-pumping (OTCP); radiation effects; traps;

D O I：

10.1109/TNS.2004.832547

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the Oxide-Trap based on Charge-Pumping (OTCP) extraction method is extended from high frequencies (HFs) to low frequencies (LFs). As a consequence, the LF-OTCP method simultaneously senses both interface-trap and border-trap (switching oxide-trap) in charge-pumping (CP) current (I-cp) measurements. We have found that radiation-induced oxide-trap (DeltaN(ot)) is dependent on DeltaV(th) (threshold voltage shift), DeltaI(cpm,h) (augmentation of maximum CP current at high frequencies), and DeltaI(cpm,l) (augmentation of maximum CP current at low frequencies), where DeltaI(cpm,h) is caused by radiation-induced interface-trap increase (DeltaN(it)) and DeltaI(cpm,l) by both radiation-induced interface-trap and border-trap increases (DeltaN(it)) and (DeltaN(bt)), respectively. We have shown that DeltaI(cpm,l) and DeltaI(cpm,h) can be easily obtained from a vertical shift of the charge-pumping curve at low and high frequencies respectively, and DeltaV(th) from a lateral one.

引用

页码：1732 / 1736

页数：5

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