Effects of irradiation damage on the structure in Cr2AlC thin film

被引:16
作者
Wang, Chunjie [1 ,2 ]
Han, Zhibin [1 ,2 ]
Su, Ranran [1 ,2 ]
Gao, Jie [3 ]
Shi, Liqun [1 ,2 ]
机构
[1] Fudan Univ, Inst Modern Phys, Appl Ion Beam Phys Lab, Shanghai 200433, Peoples R China
[2] Fudan Univ, Dept Nucl Sci & Technol, Shanghai 200433, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
关键词
Radiation damage; Cr2AlC; He; Phase transition; RAMAN-SCATTERING; HEAT-CAPACITIES; TRANSITIONS; OXIDATION; CERAMICS;
D O I
10.1016/j.nimb.2018.04.014
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The radiation damage effects of Cr2AlC film irradiated by 100 keV He ion with a fluence range of 5 x 10(15) to 1 x 10(17) ions cm(-2) at room temperature have been investigated. A range of characterization techniques including grazing-incidence X-ray diffraction, Raman scattering spectroscopy and ion beam analysis were employed to analyze the irradiation damage on the structure in Cr2AlC thin film. The Cr2AlC film exhibits sensitivity to irradiation of He ions as a result of partial disorder at a relatively low fluence of 5 x 10(15) ions cm(-2), The atomic arrangement in the crystal structure is seriously damaged at the fluence of 1 x 10(17) ions cm(-2). The lattice expansion occurs along c direction and the lattice contracts along a/b direction compared to the un-irradiated Cr2AlC. No existence of secondary phase is observed after irradiation. The processes of decomposition and phase transition induced by ion irradiation are not influenced by the chemical environment. The carbon atoms in the lattice are easy to dislocate. The carbon precipitation is induced by radiation-enhanced diffusion in the near surface layer. The accumulation has a tendency to increase with the increasing fluence.
引用
收藏
页码:286 / 290
页数:5
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