Transport characteristics of ferromagnetic single-electron transistors with non-collinear magnetizations

被引：0
|
作者：
Wisniewska, J.
Kowalik, M.
Barnas, J.
机构：
[1] Adam Mickiewicz Univ Poznan, Inst Phys, PL-61614 Poznan, Poland
[2] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland
来源：
MATERIALS SCIENCE-POLAND | 2006年 / 24卷 / 03期
关键词：
ferromagnetic single-electron transistor; spin-polarized transport; tunnel magnetoresistance;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Theoretical analysis of spin-polarized transport through a ferromagnetic single-electron transistor (FM SET) has been carried out in the sequential tunnelling regime. Two external electrodes and the central part (island) of the device are assumed to be ferromagnetic, with the corresponding magnetizations being generally non-collinear. The transport properties of the FM SET are analysed within the master equation approach with the respective transition rates determined from the Fermi golden rule. It is assumed that spin relaxation processes on the island are sufficiently fast to neglect spin accumulation. It is shown that electric current and tunnel magnetoresistance strongly depend on the magnetic configuration of the device. Transport characteristics of symmetrical and asymmetrical structures have been calculated as a function of bias and gate voltages.
引用
收藏
页码：761 / 767
页数：7
相关论文
共 50 条
  • [1] Spin-dependent transport in ferromagnetic single-electron transistors with non-collinear magnetizations
    Wisniewska, J
    Weymann, I
    Barnas, J
    MATERIALS SCIENCE-POLAND, 2004, 22 (04): : 461 - 467
  • [2] Electronic transport in a ferromagnetic single-electron transistor with non-collinear magnetizations in the co-tunnelling regime
    Wisniewska, J.
    Barnas, J.
    MATERIALS SCIENCE-POLAND, 2007, 25 (02): : 467 - 472
  • [3] Transport characteristics of ferromagnetic single-electron transistors
    Weymann, I
    Barnas, J
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2003, 236 (03): : 651 - 660
  • [4] Josephson coupling through ferromagnetic bilayer with non-collinear magnetizations
    Pajovic, Z.
    Bozovic, M.
    Radovic, Z.
    Cayssol, J.
    Buzdin, A.
    SIX INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION, 2007, 899 : 637 - 637
  • [5] Analysis of the Kondo Resonance in a Single Quantum Dot Asymmetrically Coupled to Ferromagnetic Electrodes with Non-Collinear Magnetizations
    Wawrzynjak, M.
    ACTA PHYSICA POLONICA A, 2009, 115 (01) : 303 - 305
  • [6] Resonant tunnelling through a single level quantum dot attached to ferromagnetic leads with non-collinear magnetizations
    Wawrzyniak, M.
    Gmitra, M.
    Barnas, J.
    MATERIALS SCIENCE-POLAND, 2006, 24 (03): : 695 - 700
  • [7] Magnetoresistance of ferromagnetic single-electron transistors
    Karlsson, C
    Wang, XH
    APPLIED PHYSICS LETTERS, 2000, 77 (22) : 3618 - 3620
  • [8] Nanoscaled Ferromagnetic Single-Electron Transistors
    Liu, R. S.
    Pettersson, H.
    Suyatin, D.
    Michalak, L.
    Canali, C. M.
    Samuelson, L.
    2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, : 420 - +
  • [9] Spin dependent tunneling through a quantum dot attached to ferromagnetic electrodes with non-collinear magnetizations
    Wawrzyniak, M.
    Gmitra, M.
    Barnas, J.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2006, 423 (1-2) : 264 - 266
  • [10] Resistively coupled ferromagnetic single-electron transistors
    Shirakashi, J
    Takemura, Y
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (10) : 7442 - 7444
12345