Scalability and Stability Enhancement in Self-Aligned Top-Gate Indium-Zinc-Oxide TFTs With Al Reacted Source/Drain

被引：9
作者：
Liang, Ting [1 ]
Shao, Yang [1 ]
Lu, Huiling [1 ]
Zhou, Xiaoliang [2 ]
Deng, Xuan [1 ]
Zhang, Shengdong [1 ,2 ]
机构：
[1] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China
[2] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2018年 / 6卷 / 01期
基金：
美国国家科学基金会;
关键词：
Amorphous indium-zinc-oxide (a-IZO); self-aligned; top-gate; aluminum reaction; THIN-FILM TRANSISTORS; PERFORMANCE; REGIONS;
D O I：
10.1109/JEDS.2018.2837352
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A self-aligned fabrication process for top-gate amorphous indium-zinc-oxide (a-IZO) thinfilm transistors (TFTs) is demonstrated. Aluminum (Al) thermal treatment is employed to dope the a-IZO layer and thus form the self-aligned source/drain regions. The results show that the sheet resistance of the Al-treated a-IZO layer can be as low as 360 Omega/rectangle. The fabricated top-gate TFTs typically have a mobility of 16.84 cm(2)/V . s, subthreshold swing of 0.14 V/dec and on/off current ratio of > 10(9). The Al-treated TFTs show a significant scalability and stability enhancement compared to the conventional Ar plasma-treated ones. This enhancement can be attributed to the thin Al2O3 layer formed on source-drain area that blocks the diffusion of hydrogen or H2O from the passivation layer into the source-drain and channel regions.
引用
收藏
页码：680 / 684
页数：5
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