Neutron Diffraction, Electronic Band Structure, and Electrical Resistivity of Mo3-xRuxSb7

被引:9
作者
Candolfi, Christophe [3 ,4 ]
Lenoir, Bertrand [4 ]
Leszczynski, Juliusz [4 ]
Dauscher, Anne [4 ]
Tobola, Janusz [1 ]
Clarke, Simon J. [2 ]
Smith, Ron I.
机构
[1] AGH Univ Sci & Technol, Fac Phys & Appl Comp Sci, PL-30059 Krakow, Poland
[2] Univ Oxford, Dept Chem, Inorgan Chem Lab, Oxford OX13 QR, England
[3] Rutherford Appleton Lab, ISIS Facil, Didcot OX11 0QX, Oxon, England
[4] Ecole Natl Super Mines, UMR 7198, Inst Jean Lamour, F-54042 Nancy, France
关键词
THERMOELECTRIC PERFORMANCE; CRYSTAL-GROWTH; FIGURE; STATE; MERIT;
D O I
10.1021/ic900171u
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Neutron diffraction experiments and Korringa-Kohn-Rostoker with coherent potential approximation electronic band structure calculations as well as electrical resistivity measurements have been performed on polycrystalline Mo3-xRuxSb7 samples for 0 <= x <= 1. Neutron diffraction studies have been undertaken at room temperature and extended down to 4 K to get a better understanding of the crystalline structure modifications as the Ru content increases. Both structural and chemical characterizations have unambiguously revealed a solubility limit of the Ru atoms close to 0.8. Electronic band structure calculations have provided theoretical evidence of a progressive transition from a metalliclike state (x=0) toward a semiconducting-like character as x=1 is approached, although the solubility limit of Ru precludes a crossover to a semiconducting behavior. The theoretical prediction has been experimentally confirmed by low-temperature electrical resistivity measurements from 2 up to 350 K.
引用
收藏
页码:5216 / 5223
页数:8
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