Charge Detection in Gate-Defined Bilayer Graphene Quantum Dots

被引：49

作者：

Kurzmann, Annika ^{[1
]}

Overweg, Hiske ^{[1
]}

Eich, Marius ^{[1
]}

Pally, Alessia ^{[1
]}

Rickhaus, Peter ^{[1
]}

Pisoni, Riccardo ^{[1
]}

Lee, Yongjin ^{[1
]}

Watanabe, Kenji ^{[2
]}

Taniguchi, Takashi ^{[2
]}

Ihn, Thomas ^{[1
]}

Ensslin, Klaus ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 300044, Japan

来源：

NANO LETTERS | 2019年 / 19卷 / 08期

基金：

瑞士国家科学基金会;

关键词：

Bilayer graphene; quantum dot; charge detection; tunneling; multidots; SPIN;

D O I：

10.1021/acs.nanolett.9b01617

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on charge detection in electrostatically defined quantum dot devices in bilayer graphene using an integrated charge detector. The device is fabricated without any etching and features a graphite back gate, leading to high-quality quantum dots. The charge detector is based on a second quantum dot separated from the first dot by depletion underneath a 150 nm wide gate. We show that Coulomb resonances in the sensing dot are sensitive to individual charging events on the nearby quantum dot. The potential change due to single electron charging causes a steplike change (up to 77%) in the current through the charge detector. Furthermore, the charging states of a quantum dot with tunable tunneling barriers and of coupled quantum dots can be detected.

引用

页码：5216 / 5221

页数：6

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