Surface phonons of InP(110) studied by Raman spectroscopy

被引：36

作者：

Hinrichs, K

Schierhorn, A

Haier, P

Esser, N

Richter, W

Sahm, J

机构：

[1] Technische Universität Berlin, Berlin, 10623, Sekretariat PN6-1

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.79.1094

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate that surface phonons of clean semiconductor surfaces can be studied by Raman spectroscopy. In this work the vibrational properties of clean InP(110) surfaces are investigated. Two surface phonons of A' symmetry at 254 and 270 cm(-1) in the band gap between acoustical and optical bulk branches are observed in agreement with theoretical calculations. Because of their limited resolution previous high-resolution electron-energy-loss spectroscopy experiments found only one surface phonon mode near this energy range. Additionally, three other surface modes at 69, 146, and 347 cm(-1) are identified by Raman spectroscopy.

引用

收藏

页码：1094 / 1097

页数：4

相关论文

共 23 条

[1]

ALFREY GF, 1988, J PHYS C SOLID STATE, V5, pL275

[2] RAMAN INVESTIGATION OF THE INP LATTICE-DYNAMICS [J].

BEDEL, E ;

LANDA, G ;

CARLES, R ;

REDOULES, JP ;

RENUCCI, JB .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (10) :1471-1479

[3]

Cardona M., 1982, LIGHT SCATTERING SOL

[4] DIRECT DETERMINATION OF III-V SEMICONDUCTOR SURFACE BAND-GAPS [J].

CARSTENSEN, H ;

CLAESSEN, R ;

MANZKE, R ;

SKIBOWSKI, M .

PHYSICAL REVIEW B, 1990, 41 (14) :9880-9885

[5] VIBRATIONAL-MODES OF EPITAXIAL MONOLAYER ADSORBATES ON SEMICONDUCTOR SURFACES STUDIED BY RAMAN-SCATTERING [J].

ESSER, N ;

KOPP, M ;

HAIER, P ;

RICHTER, W .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1993, 64-5 :85-94

[6] AB-INITIO CALCULATION OF THE PHONON-DISPERSION IN BULK INP AND IN THE INP(110) SURFACE [J].

FRITSCH, J ;

PAVONE, P ;

SCHRODER, U .

PHYSICAL REVIEW B, 1995, 52 (15) :11326-11334

[7]

FUCHS EP, 1965, PHYS REV, V140, pA2076

[8] OBSERVATION OF INTERFACE PHONONS BY LIGHT-SCATTERING FROM EPITAXIAL SB MONOLAYERS ON III-V SEMICONDUCTORS [J].

HUNERMANN, M ;

GEURTS, J ;

RICHTER, W .

PHYSICAL REVIEW LETTERS, 1991, 66 (05) :640-643

[9] SURFACE-STRUCTURE, LATTICE-DYNAMICS, AND RAMAN-SPECTROSCOPY OF SULFUR PASSIVATED INP(001) [J].

JIN, JM ;

DHARMAWARDANA, MWC ;

LOCKWOOD, DJ ;

AERS, GC ;

LU, ZH ;

LEWIS, LJ .

PHYSICAL REVIEW LETTERS, 1995, 75 (05) :878-881

[10] ADSORPTION OF GERMANIUM AND OF OXYGEN ON CLEAVED INP(110) SURFACES - AUGER-ELECTRON SPECTROSCOPY AND MEASUREMENTS OF WORK FUNCTION AND OF SURFACE PHOTOVOLTAGE [J].

KOENDERS, L ;

BARTELS, F ;

ULLRICH, H ;

MONCH, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1107-1115