Oxygen-related defects and their annealing behavior in low-dose Separation-by-IMplanted OXygen (SIMOX) wafers studied by slow positron beams

被引：9
作者：
Chen, ZQ [1 ]
Uedono, A
Ogura, A
Ono, H
Suzuki, R
Ohdaira, T
Mikado, T
机构：
[1] Univ Tsukuba, Inst Phys Appl, Tsukuba, Ibaraki 3058573, Japan
[2] NEC Corp Ltd, Silicon Syst Res Labs, Tsukuba, Ibaraki 3058568, Japan
[3] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
来源：
APPLIED SURFACE SCIENCE | 2002年 / 194卷 / 1-4期
关键词：
positron beam; SIMOX; vacancy-oxygen complex;
D O I：
10.1016/S0169-4332(02)00098-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Oxygen-related defects in Separation-by-IMplanted OXygen (SIMOX) wafers and their annealing behavior are studied by variable-energy positron annihilation spectroscopy. After implantation of 180 keV oxygen into Si substrates at a dose of 4 x 10(17) cm(-2), two kinds of vacancy-type defects are observed by positrons, i.e. vacancy clusters and vacancy-oxygen complexes. Their sizes are larger than and close to V-6, respectively. According to the annealing behavior of the vacancy cluster, there are three annealing stages. A detailed discussion of the annealing behavior of the two defects is presented. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：112 / 115
页数：4
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