Advanced electronic and optoelectronic materials by Atomic Layer Deposition:: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials

被引：317

作者：

Niinistö, L ^{[1
]}

Päiväsaari, J ^{[1
]}

Niinistö, J ^{[1
]}

Putkonen, M ^{[1
]}

Nieminen, M ^{[1
]}

机构：

[1] Aalto Univ, Inorgan & Analyt Chem Lab, Espoo 02015, Finland

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 07期

关键词：

D O I：

10.1002/pssa.200406798

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The principle and practice of Atomic Layer Deposition (ALD) are described with special emphasis on the advantages of the method for processing of thin films for advanced applications in electronics, catalysis and sensor technology. The examples of ALD-processed materials include ZrO2 and other high-k dielectrics especially the rare earth oxides, SnO2 for gas sensors and ZnO for optoelectronics. The various precursor chemistries leading to these materials are discussed. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1443 / 1452

页数：10

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