Red-Shift Effect and Sensitive Responsivity of MoS2/ZnO Flexible Photodetectors

被引：30

作者：

Hsiao, Yu-Jen ^{[1
]}

Fang, Te-Hua ^{[2
]}

Ji, Liang-Wen ^{[3
]}

Yang, Bo-Yi ^{[2
]}

机构：

[1] Natl Appl Res Labs, Natl Nano Device Labs, Tainan 741, Taiwan

[2] Natl Kaohsiung Univ Appl Sci, Dept Mech Engn, Kaohsiung 807, Taiwan

[3] Natl Formosa Univ, Inst Electopt & Mat Sci, Yunlin 632, Taiwan

来源：

NANOSCALE RESEARCH LETTERS | 2015年 / 10卷

关键词：

MoS2; Photodetectors; Photo-induced response; Flexible; ULTRAVIOLET;

D O I：

10.1186/s11671-015-1151-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The optoelectronic characteristics of molybdenum disulfide (MoS2)/ZnO flexible photodetectors are investigated. A red-shift effect and improved photocurrent properties of the flexible devices are demonstrated. MoS2 doping improved the photocurrent properties and conductivity. The photocurrent/dark current ratios of pure ZnO and MoS2/ZnO flexible photodetectors were 10(3) and 10(4), respectively. The responsivity of MoS2/ZnO increased, and the wavelength was red-shifted.

引用

页码：1 / 5

页数：5

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