Red-Shift Effect and Sensitive Responsivity of MoS2/ZnO Flexible Photodetectors

被引：30
作者：
Hsiao, Yu-Jen [1 ]
Fang, Te-Hua [2 ]
Ji, Liang-Wen [3 ]
Yang, Bo-Yi [2 ]
机构：
[1] Natl Appl Res Labs, Natl Nano Device Labs, Tainan 741, Taiwan
[2] Natl Kaohsiung Univ Appl Sci, Dept Mech Engn, Kaohsiung 807, Taiwan
[3] Natl Formosa Univ, Inst Electopt & Mat Sci, Yunlin 632, Taiwan
来源：
NANOSCALE RESEARCH LETTERS | 2015年 / 10卷
关键词：
MoS2; Photodetectors; Photo-induced response; Flexible; ULTRAVIOLET;
D O I：
10.1186/s11671-015-1151-5
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The optoelectronic characteristics of molybdenum disulfide (MoS2)/ZnO flexible photodetectors are investigated. A red-shift effect and improved photocurrent properties of the flexible devices are demonstrated. MoS2 doping improved the photocurrent properties and conductivity. The photocurrent/dark current ratios of pure ZnO and MoS2/ZnO flexible photodetectors were 10(3) and 10(4), respectively. The responsivity of MoS2/ZnO increased, and the wavelength was red-shifted.
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页码：1 / 5
页数：5
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