Improved Configuration of Multilevel Inverter with Reduced Semiconductor Devices

被引:10
作者
Gautam, Shivam Prakash [1 ]
Kumar, Lalit [1 ]
Gupta, Shubhrata [1 ]
机构
[1] Natl Inst Technol, Dept Elect Engn, Raipur 492010, Madhya Pradesh, India
关键词
asymmetrical topology; improved configuration; less variety of switches; multi-level inverter; multi-carrier pulse width modulation; reduced switches; reduced losses; symmetrical topology; total harmonic distortion; unidirectional switches; MODULATION STRATEGY; SERIES CONNECTION; CONVERTERS; TOPOLOGIES; DESIGN; STATCOM;
D O I
10.1080/15325008.2016.1250238
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In DC/AC power conversion, multi-level inverter (MLI) incorporates a large number of semiconductor devices, which increases its cost and complexity. Moreover, the recently introduced topology uses a large variety of semiconductor switches. Therefore, a great attention is paid toward increasing output voltage levels with less variety and reduced number of switches as compared to conventional topologies. In this paper, improved configuration of symmetrical and asymmetrical MLI is proposed. Improvement is brought on both quantitative and qualitative basis, which led to a reduction in number of semiconductor devices and its variety. Analysis of power losses of the proposed topology is carried out and compared with CHB. A wide range of comparison with recently proposed topologies is made in order to show the novelty and contribution of the proposed topology. Multi-Carrier Pulse Width Modulation strategy is adopted for generating the switching pulses. The detailed simulation study of the proposed topology has been carried out using MATLAB/SIMULINK and validated experimentally for 7-level and 81-level inverter.
引用
收藏
页码:233 / 245
页数:13
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