Backside Configured Surface Plasmonic Enhancement

被引：0

作者：

Gu, Guiru ^{[1
]}

Vaillancourt, Jarrod ^{[2
]}

Lu, Xuejun ^{[1
]}

机构：

[1] Univ Massachusetts Lowell, Dept Elect & Comp Engn, One Univ Ave, Lowell, MA 01854 USA

[2] Appl NanoFemto Technol LLC, Lowell, MA 01851 USA

来源：

ELECTRONIC, PHOTONIC, PLASMONIC, PHONONIC AND MAGNETIC PROPERTIES OF NANOMATERIALS | 2014年 / 1590卷

关键词：

backside configured; top configured; surface plasmonic resonance; surface plasmonic structure; infrared photodetector; surface plasmonic enhancement; RESONANCE SENSORS; TRANSMISSION; EXCITATION; OPTICS;

D O I：

10.1063/1.4870217

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, we fabricated, measured and compared the quantum dots infrared photodetector enhancement by the top- and backside- configured plasmonic structures. The backside configured plasmonic structure can provide much higher device performance enhancement. Furthermore, the excitation of the surface plasmonic waves by the top- and backside- configured plasmonic structures was analyzed. Detailed simulation results of the electric field at different wavelength from top illumination and backside illumination were provided. The stronger electric field from the backside illumination attributed to the higher enhancement.

引用

页码：195 / 199

页数：5

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