Influence of TiSi2 formation temperature on film thermal stability

被引：3

作者：

Sabbadini, A ^{[1
]}

Cazzaniga, F ^{[1
]}

Marangon, T ^{[1
]}

机构：

[1] STMicroelect, I-20041 Agrate Brianza, Milan, Italy

来源：

MICROELECTRONIC ENGINEERING | 2000年 / 50卷 / 1-4期

关键词：

titanium silicide; thermal stability; RTA;

D O I：

10.1016/S0167-9317(99)00277-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work is addressed to investigate thermal stability of a thin TiSi2 film, that is its ability to resist degradation due to heat treatments at high temperatures. The study was carried out as a function of the formation RT treatment (675-750 degrees C) at the end of a common process flow. Sheet resistance measurements were employed in order to evaluate this degradation. Electrical measures were performed on large and narrow poly-Si lines, on Van Der Pauw structures and on doped mono-Si substrates. An increase in sheet resistance value of an order of magnitude for silicide formed at temperatures below 700 degrees C with respect to the one formed at temperatures above 700 degrees C was found, particularly on poly-Si lines. The effect is detectable independently of the structure: it was observed also on 0.75-mu m wide poly-Si lines, increasing when line width decreases. Different morphological analyses were carried out for investigating the influence of the formation temperature. We explain the increase of the final sheet resistance decreasing the formation temperature as a lower thermal stability of the TiSi2 film, leading to a thermal grooving of the silicide grains. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：159 / 164

页数：6

共 6 条

[1] THERMAL-STABILITY OF SILICIDE ON POLYCRYSTALLINE SI [J].