Roughness Reduction in Polycrystalline Silicon Thin Films Formed by Continuous-Wave Laser Lateral Crystallization with Cap SiO2 Thin Films

被引：10

作者：

Fujii, Shuntaro ^{[1
]}

Kuroki, Shin-Ichiro ^{[1
]}

Numata, Masayuki ^{[1
]}

Kotani, Koji ^{[1
]}

Ito, Takashi ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 04期

关键词：

TRANSISTORS; DEPENDENCE;

D O I：

10.1143/JJAP.48.04C129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In continuous-wave (cw) laser lateral crystallization of amorphous silicon (a-Si) thin films, the effects of cap SiO2 thin films were investigated. The thickness of the cap SiO2 film was 10 nm, which is sufficiently thin to exclude anti reflection effect. The cap SiO2 thin films suppressed the generation of voids during the cw laser crystallization, and the available crystallization condition to form lateral-crystallized polycrystalline silicon (poly-Si) thin films was expanded. By using the cap SiO2 thin films, the surface of the lateral-crystallized poly-Si thin films became smooth, and an average roughness of 1.3 nm was achieved. (C) 2009 The Japan Society of Applied Physics

引用

页数：4

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