Characteristic energy band values and electron attenuation length of a chemical-vapor-deposition diamond (001)2 x 1 surface

被引：18

作者：

Kono, S. ^{[1
]}

Saitou, T. ^{[1
]}

Kawata, H. ^{[1
]}

Goto, T. ^{[1
]}

Kakefuda, Y. ^{[1
]}

Komeda, T. ^{[1
]}

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan

来源：

SURFACE SCIENCE | 2009年 / 603卷 / 06期

关键词：

Diamond; Chemical-vapor-deposition; Characteristic surface energy band values; Electron attenuation length; Surface Fermi-level; (001)2 x 1 Surface; MEAN-FREE-PATH; AFFINITY; ELEMENTS;

D O I：

10.1016/j.susc.2009.01.033

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The characteristic energy band values such as the Fermi-level position with respect to valence band top for a boron-doped p-type hydrogen-terminated chemical-vapor-deposition (CVD) diamond (001)2 x 1 surface and for a clean CVD diamond (001)2 x 1 surface have been determined by a new method with an accuracy of +/- 0.02 eV. The electron attenuation length for the clean diamond (00 1)2 x 1 surface for the electron kinetic energy of C 1s X-ray photoemission peak by Mg K alpha excitation is experimentally determined to be 2.1-2.2 nm. These values are compared and discussed with the previously reported experimental and simulation values. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：860 / 866

页数：7

共 18 条

[1] THE MEASUREMENT OF INNER POTENTIAL FOR DIAMOND, GERMANIUM AND SILICON [J].

ASHENFORD, DE ;

LISGARTEN, ND .

ACTA CRYSTALLOGRAPHICA SECTION A, 1983, 39 (MAY) :311-314

[2] 1ST-PRINCIPLES LINEAR COMBINATION OF ATOMIC ORBITALS METHOD FOR THE COHESIVE AND STRUCTURAL-PROPERTIES OF SOLIDS - APPLICATION TO DIAMOND [J].

CHELIKOWSKY, JR ;

LOUIE, SG .

PHYSICAL REVIEW B, 1984, 29 (06) :3470-3481

[3] Electron affinity and work function of differently oriented and doped diamond surfaces determined by photoelectron spectroscopy [J].

Diederich, L ;

Küttel, O ;

Aebi, P ;

Schlapbach, L .

SURFACE SCIENCE, 1998, 418 (01) :219-239

[4] Surface-state dispersion of hydrogenated and hydrogen-free diamond (100) surfaces determined by angle-resolved photoemission [J].

Diederich, L ;

Aebi, P ;

Kuttel, OM ;

Maillard-Schaller, E ;

Fasel, R ;

Schlapbach, L .

SURFACE SCIENCE, 1997, 393 (1-3) :L77-L83

[5] ESCAPE DEPTHS OF X-RAY (MG K-ALPHA)INDUCED PHOTOELECTRONS AND RELATIVE PHOTOIONIZATION CROSS-SECTIONS FOR 3P SUBSHELL OF ELEMENTS OF 1ST LONG PERIOD [J].

EVANS, S ;

PRITCHARD, RG ;

THOMAS, JM .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (13) :2483-2498

[6]

Fadley C. S., 1976, Progress in Solid State Chemistry, V11, P265, DOI 10.1016/0079-6786(76)90013-3

[7] High-resolution surface-sensitive C 1s core-level spectra of clean and hydrogen-terminated diamond (100) and (111) surfaces [J].

Graupner, R ;

Maier, F ;

Ristein, J ;

Ley, L ;

Jung, C .

PHYSICAL REVIEW B, 1998, 57 (19) :12397-12409

[8] Surface Energy Band and Electron Affinity of Highly Phosphorous-doped Epitaxial CVD Diamond [J].

Kono, S. ;

Mizuochi, K. ;

Takyo, G. ;

Plusnin, N. I. ;

Aoyama, T. ;

Goto, T. ;

Abukawa, T. ;

Namba, A. ;

Nishibayashi, Y. ;

Imai, T. .

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2007, 5 :33-40

[9] An electron-spectroscopic view of CVD diamond surface conductivity [J].

Kono, S ;

Shiraishi, M ;

Goto, T ;

Abukawa, T ;

Tachiki, M ;

Kawarada, H .

[10] UHV μ-electron beam evaluation of the CVD diamond particles grown on Si(001) [J].

Kono, S ;

Goto, T ;

Abukawa, T ;

Takakuwa, Y ;

Sato, K ;

Yagi, H ;

Ito, T .

← 1 2 →