AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(111)

The AlN buffer layer thickness influence on the inversion domains (IDs) in GaN/AlN/Si(1 1 1) grown by plasma assisted molecular beam epitaxy (MBE) is studied by transmission electron microscopy (TEM). The GaN layer polarity is determined by convergent beam electron diffraction (CBED). The AlN buffer layer thickness notably affects to the IDs density and the GaN epilayer polarity. Moreover the threading dislocation distribution existence also depends on such thickness. (C) 2002 Elsevier Science B.V. All rights reserved.