AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(111)

被引：9

作者：

Sánchez, AM

Pacheco, FJ

Molina, SI

Ruterana, P

Calle, F

Palacios, TA

Sánchez-García, MA

Calleja, E

García, R

机构：

[1] Univ Cadiz, Dept Ciencia Mat & Ingn Met & Quim Inorgan, Puerto Real 11510, Cadiz, Spain

[2] Inst Sci Mat & Rayonnement, UMR 6508 CNRS, CRISMAT, ESCTM, F-14050 Caen, France

[3] Univ Politecn Madrid, ETSI Telecomunicac, Dept Ingn Elect, Madrid 28040, Spain

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 93卷 / 1-3期

关键词：

transmission electron microscopy (TEM); GaN; molecular beam epitaxy (MBE); inversion domains (IDs); AlN buffer; Si (111); surface polarity;

D O I：

10.1016/S0921-5107(02)00030-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The AlN buffer layer thickness influence on the inversion domains (IDs) in GaN/AlN/Si(1 1 1) grown by plasma assisted molecular beam epitaxy (MBE) is studied by transmission electron microscopy (TEM). The GaN layer polarity is determined by convergent beam electron diffraction (CBED). The AlN buffer layer thickness notably affects to the IDs density and the GaN epilayer polarity. Moreover the threading dislocation distribution existence also depends on such thickness. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：181 / 184

页数：4

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