Short wavelength (1-4 μm) infrared detectors using intersubband transitions in GaAs-based quantum wells (vol 83, pg 6178, 1998)

被引:3
作者
Aslan, B [1 ]
Liu, HC [1 ]
Buchanan, M [1 ]
Wasilewski, ZR [1 ]
机构
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
关键词
D O I
10.1063/1.1476404
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:10230 / 10230
页数:1
相关论文
共 3 条
[1]   On the internal photoemission spectrum of PtSi/p-Si infrared detectors [J].
Aslan, B ;
Turan, R .
INFRARED PHYSICS & TECHNOLOGY, 2002, 43 (02) :85-90
[2]  
ASLAN B, 1998, J APPL PHYS, V83, P6178
[3]   Short wavelength (1-4 μm) infrared detectors using intersubband transitions in GaAs-based quantum wells [J].
Liu, HC ;
Buchanan, M ;
Wasilewski, ZR .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :6178-6181